NSVBC124EPDXV6T1G
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| Part Number | NSVBC124EPDXV6T1G |
|---|---|
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | SS SOT563 DUAL RSTR XSTR |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | 4000 pcs | ||||
|---|---|---|---|---|---|
| $0.03 | |||||
- Product parameter
- Data sheet
Product parameter
| Part Number | NSVBC124EPDXV6T1G | Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|---|---|
| Description | SS SOT563 DUAL RSTR XSTR | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 816553 pcs | Data sheet | MUN5312DW1, NSBC124EPDxx |
| Category | Discrete Semiconductor Products | Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA | Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Supplier Device Package | SOT-563 | Series | Automotive, AEC-Q101 |
| Resistor - Emitter Base (R2) | 22 kOhms | Resistor - Base (R1) | 22 kOhms |
| Power - Max | 339W | Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount | Manufacturer Standard Lead Time | 10 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Frequency - Transition | - |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 339W Surface Mount SOT-563 | DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Current - Collector Cutoff (Max) | 500nA | Current - Collector (Ic) (Max) | 100mA |
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