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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSVBC114YPDXV65G

NSVBC114YPDXV65G

NSVBC114YPDXV65G
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Part Number NSVBC114YPDXV65G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN/PNP SOT563
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4657 pcs
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Part Number NSVBC114YPDXV65G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN/PNP SOT563 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4657 pcs Data sheet
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-563 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 500mW Packaging Tape & Reel (TR)
Package / Case SOT-563, SOT-666 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition - Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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