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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > NSS40300MDR2G

NSS40300MDR2G

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Part Number NSS40300MDR2G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2PNP 40V 3A 8SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 205164 pcs
Reference Price
(In US Dollars)		2500 pcs5000 pcs12500 pcs
$0.12$0.112$0.11

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Part Number NSS40300MDR2G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2PNP 40V 3A 8SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 205164 pcs Data sheet NSS40300MDR2G
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 170mV @ 200mA, 2A Transistor Type 2 PNP (Dual)
Supplier Device Package 8-SOIC Series -
Power - Max 653mW Packaging Tape & Reel (TR)
Package / Case 8-SOIC (0.154", 3.90mm Width) Other Names NSS40300MDR2G-ND
NSS40300MDR2GOSTR
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 2 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 100MHz
Detailed Description Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A, 2V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 3A

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