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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NSS35200MR6T1G

NSS35200MR6T1G

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Part Number NSS35200MR6T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 35V 2A TSOP-6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 345926 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.188$0.153$0.104$0.078$0.058

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$0.188

Product parameter

Part Number NSS35200MR6T1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 35V 2A TSOP-6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 345926 pcs Data sheet NSS35200MR6T1G
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 35V
Vce Saturation (Max) @ Ib, Ic 310mV @ 20mA, 2A Transistor Type PNP
Supplier Device Package 6-TSOP Series -
Power - Max 625mW Packaging Cut Tape (CT)
Package / Case SOT-23-6 Other Names NSS35200MR6T1GOSCT
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 2 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 100MHz
Detailed Description Bipolar (BJT) Transistor PNP 35V 2A 100MHz 625mW Surface Mount 6-TSOP DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1.5A, 1.5V
Current - Collector Cutoff (Max) 100nA Current - Collector (Ic) (Max) 2A
Base Part Number NSS35200

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