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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSBA144WDXV6T1G

NSBA144WDXV6T1G

NSBA144WDXV6T1G
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Part Number NSBA144WDXV6T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2PNP PREBIAS 0.5W SOT563
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 521507 pcs
Reference Price
(In US Dollars)		4000 pcs
$0.038

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$0.038

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Part Number NSBA144WDXV6T1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2PNP PREBIAS 0.5W SOT563 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 521507 pcs Data sheet MUN5137DW1, NSBA144WDxx
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-563 Series -
Resistor - Emitter Base (R2) 22 kOhms Resistor - Base (R1) 47 kOhms
Power - Max 500mW Packaging Tape & Reel (TR)
Package / Case SOT-563, SOT-666 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 4 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA

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