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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > NJX1675PDR2G

NJX1675PDR2G

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Part Number	NJX1675PDR2G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN/PNP 30V 3A 8SOIC
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4718 pcs
Reference Price (In US Dollars)	Get a quote

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Data sheet

Product parameter

Part Number	NJX1675PDR2G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN/PNP 30V 3A 8SOIC	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4718 pcs	Data sheet	NJX1675PDR2G
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	30V
Vce Saturation (Max) @ Ib, Ic	115mV @ 200mA, 2A, 170mV @ 200mA, 2A	Transistor Type	NPN, PNP
Supplier Device Package	8-SOIC	Series	-
Power - Max	2W	Packaging	Tape & Reel (TR)
Package / Case	8-SOIC (0.154", 3.90mm Width)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	100MHz, 120MHz
Detailed Description	Bipolar (BJT) Transistor Array NPN, PNP 30V 3A 100MHz, 120MHz 2W Surface Mount 8-SOIC	DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 1A, 2V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	3A

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