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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NJL4281DG

NJL4281DG

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Part Number	NJL4281DG
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 350V 15A TO264
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 5566 pcs
Reference Price (In US Dollars)	Get a quote

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Data sheet

Product parameter

Part Number	NJL4281DG	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 350V 15A TO264	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5566 pcs	Data sheet	NJL4281,4302D
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	350V
Vce Saturation (Max) @ Ib, Ic	1V @ 800mA, 8A	Transistor Type	NPN + Diode (Isolated)
Supplier Device Package	TO-264	Series	-
Power - Max	230W	Packaging	Tube
Package / Case	TO-264-5	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	35MHz
Detailed Description	Bipolar (BJT) Transistor NPN + Diode (Isolated) 350V 15A 35MHz 230W Through Hole TO-264	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5A, 5V
Current - Collector Cutoff (Max)	100µA	Current - Collector (Ic) (Max)	15A

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