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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > NGTD28T65F2WP

NGTD28T65F2WP

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Part Number NGTD28T65F2WP
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT TRENCH FIELD STOP 650V DIE
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 21624 pcs
Reference Price
(In US Dollars)
88 pcs
$1.627

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Quantity:
Total:
$1.627

Product parameter

Part Number NGTD28T65F2WP Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT TRENCH FIELD STOP 650V DIE Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 21624 pcs Data sheet NGTD28T65F2
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 650V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A Test Condition -
Td (on/off) @ 25°C - Switching Energy -
Supplier Device Package Die Series -
Packaging Bulk Package / Case Die
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Manufacturer Standard Lead Time 4 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard IGBT Type Trench Field Stop
Detailed Description IGBT Trench Field Stop 650V Surface Mount Die Current - Collector Pulsed (Icm) 200A

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