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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > MUN5137DW1T1G

MUN5137DW1T1G

MUN5137DW1T1G
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Part Number MUN5137DW1T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2PNP PREBIAS 0.25W SC88
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4121 pcs
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Part Number MUN5137DW1T1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2PNP PREBIAS 0.25W SC88 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4121 pcs Data sheet MUN5137DW1, NSBA144WDxx
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package SC-88/SC70-6/SOT-363 Series -
Resistor - Emitter Base (R2) 22 kOhms Resistor - Base (R1) 47 kOhms
Power - Max 250mW Packaging Tape & Reel (TR)
Package / Case 6-TSSOP, SC-88, SOT-363 Other Names MUN5137DW1T1GOS
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
Base Part Number MUN51**DW1T

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