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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > MUN5135DW1T1G

MUN5135DW1T1G

MUN5135DW1T1G
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Part Number MUN5135DW1T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2PNP PREBIAS 0.25W SOT363
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1164003 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.099$0.081$0.043$0.028$0.019

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Product parameter

Part Number MUN5135DW1T1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 2PNP PREBIAS 0.25W SOT363 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1164003 pcs Data sheet MUN5135DW1, NSBA123JDxx
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package SC-88/SC70-6/SOT-363 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 250mW Packaging Cut Tape (CT)
Package / Case 6-TSSOP, SC-88, SOT-363 Other Names MUN5135DW1T1GOSCT
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 40 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition - Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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