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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > MMUN2112LT1

MMUN2112LT1

MMUN2112LT1
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Part Number MMUN2112LT1
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS PNP 246MW SOT23-3
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 5497 pcs
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Part Number MMUN2112LT1 Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS PNP 246MW SOT23-3 Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 5497 pcs Data sheet MMUN21xxLT1,3 Series
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type PNP - Pre-Biased
Supplier Device Package SOT-23-3 (TO-236) Series -
Resistor - Emitter Base (R2) 22 kOhms Resistor - Base (R1) 22 kOhms
Power - Max 246mW Packaging Tape & Reel (TR)
Package / Case TO-236-3, SC-59, SOT-23-3 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
Base Part Number MMUN21**L

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