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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > MMUN2111LT3G

MMUN2111LT3G

MMUN2111LT3G
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Part Number MMUN2111LT3G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS PNP 246MW SOT23-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5470428 pcs
Reference Price
(In US Dollars)
10000 pcs30000 pcs50000 pcs100000 pcs250000 pcs
$0.006$0.006$0.005$0.005$0.004

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Product parameter

Part Number MMUN2111LT3G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS PNP 246MW SOT23-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5470428 pcs Data sheet MUNx111, MMUN2111L, DTA114Exx, NSBA114EF3
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type PNP - Pre-Biased
Supplier Device Package SOT-23-3 (TO-236) Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 246mW Packaging Tape & Reel (TR)
Package / Case TO-236-3, SC-59, SOT-23-3 Other Names MMUN2111LT3G-ND
MMUN2111LT3GOSTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 36 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
Base Part Number MMUN21**L

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