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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD200T4G

MJD200T4G

MJD200T4G
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number MJD200T4G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 25V 5A DPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 317290 pcs
Reference Price
(In US Dollars)		2500 pcs5000 pcs12500 pcs25000 pcs
$0.072$0.068$0.063$0.062

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Part Number MJD200T4G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 25V 5A DPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 317290 pcs Data sheet MJD200, MJD210
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 25V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A Transistor Type NPN
Supplier Device Package DPAK Series -
Power - Max 1.4W Packaging Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Other Names MJD200T4GOS
MJD200T4GOS-ND
MJD200T4GOSTR
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 6 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 65MHz
Detailed Description Bipolar (BJT) Transistor NPN 25V 5A 65MHz 1.4W Surface Mount DPAK DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A, 1V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 5A
Base Part Number MJD200

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