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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD128T4G

MJD128T4G

MJD128T4G
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Part Number MJD128T4G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP DARL 120V 8A DPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 196560 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.243$0.215$0.165$0.13$0.104

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$0.243

Product parameter

Part Number MJD128T4G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP DARL 120V 8A DPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 196560 pcs Data sheet MJD128T4(G)
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A Transistor Type PNP - Darlington
Supplier Device Package DPAK Series -
Power - Max 1.75W Packaging Original-Reel®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Other Names MJD128T4GOSDKR
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 2 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 4MHz
Detailed Description Bipolar (BJT) Transistor PNP - Darlington 120V 8A 4MHz 1.75W Surface Mount DPAK DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V
Current - Collector Cutoff (Max) 5mA Current - Collector (Ic) (Max) 8A

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