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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQAF19N60

FQAF19N60

FQAF19N60
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Part Number FQAF19N60
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 11.2A TO-3PF
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4825 pcs
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Part Number FQAF19N60 Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 11.2A TO-3PF Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4825 pcs Data sheet FQAF19N60
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3PF Series QFET®
Rds On (Max) @ Id, Vgs 380 mOhm @ 5.6A, 10V Power Dissipation (Max) 120W (Tc)
Packaging Tube Package / Case SC-94
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 600V
Detailed Description N-Channel 600V 11.2A (Tc) 120W (Tc) Through Hole TO-3PF Current - Continuous Drain (Id) @ 25°C 11.2A (Tc)

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