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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQA7N80C

FQA7N80C

FQA7N80C
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Part Number FQA7N80C
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 7A TO-3P
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5592 pcs
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Part Number FQA7N80C Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 7A TO-3P Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5592 pcs Data sheet FQA7N80C
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3P Series QFET®
Rds On (Max) @ Id, Vgs 1.9 Ohm @ 3.5A, 10V Power Dissipation (Max) 198W (Tc)
Packaging Tube Package / Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 800V
Detailed Description N-Channel 800V 7A (Tc) 198W (Tc) Through Hole TO-3P Current - Continuous Drain (Id) @ 25°C 7A (Tc)

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