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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQA6N90C-F109

FQA6N90C-F109

FQA6N90C-F109
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Part Number FQA6N90C-F109
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 900V 6A TO-3P
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 58351 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs450 pcs900 pcs1350 pcs
$1.238$1.106$0.818$0.664$0.619

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$1.238

Product parameter

Part Number FQA6N90C-F109 Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 900V 6A TO-3P Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 58351 pcs Data sheet FQA6N90C_F109
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3PN Series QFET®
Rds On (Max) @ Id, Vgs 2.3 Ohm @ 3A, 10V Power Dissipation (Max) 198W (Tc)
Packaging Tube Package / Case TO-3P-3, SC-65-3
Other Names FQA6N90C_F109
FQA6N90C_F109-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 11 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 900V
Detailed Description N-Channel 900V 6A (Tc) 198W (Tc) Through Hole TO-3PN Current - Continuous Drain (Id) @ 25°C 6A (Tc)

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