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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BU323ZG

BU323ZG

BU323ZG
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Part Number BU323ZG
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 350V 10A TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 68855 pcs
Reference Price
(In US Dollars)
1 pcs30 pcs120 pcs510 pcs1020 pcs
$1.009$0.856$0.729$0.599$0.497

Submit a Request For Quotation on quantities greater than those displayed.

Target Price:(USD)
Quantity:
Total:
$1.009

Product parameter

Part Number BU323ZG Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 350V 10A TO247 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 68855 pcs Data sheet BU323Z
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 350V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 250mA, 10A Transistor Type NPN - Darlington
Supplier Device Package TO-247 Series -
Power - Max 150W Packaging Tube
Package / Case TO-247-3 Other Names BU323ZG-ND
BU323ZGOS
Operating Temperature -65°C ~ 175°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 9 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 2MHz
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 350V 10A 2MHz 150W Through Hole TO-247 DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 5A, 4.6V
Current - Collector Cutoff (Max) 100µA Current - Collector (Ic) (Max) 10A

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