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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BU323Z

BU323Z

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Part Number	BU323Z
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 350V 10A TO-218
Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant

~~In Stock~~ 5587 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	BU323Z	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 350V 10A TO-218	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	5587 pcs	Data sheet	BU323Z
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	350V
Vce Saturation (Max) @ Ib, Ic	1.7V @ 250mA, 10A	Transistor Type	NPN - Darlington
Supplier Device Package	SOT-93	Series	-
Power - Max	150W	Packaging	Tube
Package / Case	TO-218-3	Operating Temperature	-65°C ~ 175°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant	Frequency - Transition	2MHz
Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 350V 10A 2MHz 150W Through Hole SOT-93	DC Current Gain (hFE) (Min) @ Ic, Vce	500 @ 5A, 4.6V
Current - Collector Cutoff (Max)	100µA	Current - Collector (Ic) (Max)	10A

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