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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIA421DJ-T1-GE3

SIA421DJ-T1-GE3

SIA421DJ-T1-GE3
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number SIA421DJ-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET P-CH 30V 12A SC70-6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 146181 pcs
Reference Price
(In US Dollars)		3000 pcs6000 pcs
$0.153$0.145

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$0.153

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Part Number SIA421DJ-T1-GE3 Manufacturer Vishay Siliconix
Description MOSFET P-CH 30V 12A SC70-6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 146181 pcs Data sheet SIA421DJ
Category Discrete Semiconductor Products Voltage - Test 950pF @ 15V
Voltage - Breakdown PowerPAK® SC-70-6 Single Vgs(th) (Max) @ Id 35 mOhm @ 5.3A, 10V
Vgs (Max) 4.5V, 10V Technology MOSFET (Metal Oxide)
Series TrenchFET® RoHS Status Tape & Reel (TR)
Rds On (Max) @ Id, Vgs 12A (Tc) Polarization PowerPAK® SC-70-6
Other Names SIA421DJ-T1-GE3TR
SIA421DJT1GE3		 Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 24 Weeks Manufacturer Part Number SIA421DJ-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds 29nC @ 10V IGBT Type ±20V
Gate Charge (Qg) (Max) @ Vgs 3V @ 250µA FET Feature P-Channel
Expanded Description P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single Drain to Source Voltage (Vdss) -
Description MOSFET P-CH 30V 12A SC70-6 Current - Continuous Drain (Id) @ 25°C 30V
Capacitance Ratio 3.5W (Ta), 19W (Tc)

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