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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > TPC8212-H(TE12LQ,M

TPC8212-H(TE12LQ,M

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Part Number TPC8212-H(TE12LQ,M
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET 2N-CH 30V 6A SOP8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4224 pcs
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Part Number TPC8212-H(TE12LQ,M Manufacturer Toshiba Semiconductor and Storage
Description MOSFET 2N-CH 30V 6A SOP8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4224 pcs Data sheet Mosfets Prod GuideTPC8212-H
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.3V @ 1mA
Supplier Device Package 8-SOP (5.5x6.0) Series -
Rds On (Max) @ Id, Vgs 21 mOhm @ 3A, 10V Power - Max 450mW
Packaging Tape & Reel (TR) Package / Case 8-SOIC (0.173", 4.40mm Width)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 10V Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V Detailed Description Mosfet Array 2 N-Channel (Dual) 30V 6A 450mW Surface Mount 8-SOP (5.5x6.0)
Current - Continuous Drain (Id) @ 25°C 6A

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