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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPC8115(TE12L,Q,M)

TPC8115(TE12L,Q,M)

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Part Number TPC8115(TE12L,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET P-CH 20V 10A SOP8 2-6J1B
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4996 pcs
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Part Number TPC8115(TE12L,Q,M) Manufacturer Toshiba Semiconductor and Storage
Description MOSFET P-CH 20V 10A SOP8 2-6J1B Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4996 pcs Data sheet TPC8115Mosfets Prod Guide
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1.2V @ 200µA
Vgs (Max) ±8V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOP (5.5x6.0) Series U-MOSIV
Rds On (Max) @ Id, Vgs 10 mOhm @ 5A, 4.5V Power Dissipation (Max) 1W (Ta)
Packaging Tape & Reel (TR) Package / Case 8-SOIC (0.173", 4.40mm Width)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 9130pF @ 10V Gate Charge (Qg) (Max) @ Vgs 115nC @ 5V
FET Type P-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Drain to Source Voltage (Vdss) 20V
Detailed Description P-Channel 20V 10A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0) Current - Continuous Drain (Id) @ 25°C 10A (Ta)

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