TK6A50D(STA4,Q,M)
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| Part Number | TK6A50D(STA4,Q,M) |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N-CH 500V 6A TO-220SIS |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | 50 pcs | ||||
|---|---|---|---|---|---|
| $0.451 | |||||
- Product parameter
- Data sheet
Product parameter
| Part Number | TK6A50D(STA4,Q,M) | Manufacturer | Toshiba Semiconductor and Storage |
|---|---|---|---|
| Description | MOSFET N-CH 500V 6A TO-220SIS | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 84382 pcs | Data sheet | TK6A50D |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 4.4V @ 1mA |
| Vgs (Max) | ±30V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220SIS | Series | π-MOSVII |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 3A, 10V | Power Dissipation (Max) | 35W (Tc) |
| Packaging | Tube | Package / Case | TO-220-3 Full Pack |
| Other Names | TK6A50D(STA4QM) TK6A50DSTA4QM |
Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 500V | Detailed Description | N-Channel 500V 6A (Ta) 35W (Tc) Through Hole TO-220SIS |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
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