TK4P60DB(T6RSS-Q)
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| Part Number | TK4P60DB(T6RSS-Q) |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N-CH 600V 3.7A DPAK-3 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | Get a quote | ||||
- Product parameter
- Data sheet
Product parameter
| Part Number | TK4P60DB(T6RSS-Q) | Manufacturer | Toshiba Semiconductor and Storage |
|---|---|---|---|
| Description | MOSFET N-CH 600V 3.7A DPAK-3 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 4784 pcs | Data sheet | TK4P60DB |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 4.4V @ 1mA |
| Vgs (Max) | ±30V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | D-Pak | Series | π-MOSVII |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 1.9A, 10V | Power Dissipation (Max) | 80W (Tc) |
| Packaging | Tape & Reel (TR) | Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Other Names | TK4P60DBT6RSSQ | Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 600V | Detailed Description | N-Channel 600V 3.7A (Ta) 80W (Tc) Surface Mount D-Pak |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
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