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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN4907FE,LF(CB

RN4907FE,LF(CB

RN4907FE,LF(CB
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Part Number RN4907FE,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1593943 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs25 pcs100 pcs
$0.08$0.072$0.066$0.047
250 pcs500 pcs1000 pcs 
$0.028$0.023$0.016 

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Target Price:(USD)
Quantity:
Total:
$0.08

Product parameter

Part Number RN4907FE,LF(CB Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN/PNP PREBIAS 0.1W ES6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1593943 pcs Data sheet RN4907FE
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package ES6 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 100mW Packaging Cut Tape (CT)
Package / Case SOT-563, SOT-666 Other Names RN4907FE(T5LFT)CT
RN4907FE(T5LFT)CT-ND
RN4907FELF(CBCT
RN4907FELF(CTCT
RN4907FELF(CTCT-ND
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz, 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6 DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA

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