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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN4902FE,LF(CT

RN4902FE,LF(CT

RN4902FE,LF(CT
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Part Number RN4902FE,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 2204261 pcs
Reference Price
(In US Dollars)
4000 pcs8000 pcs12000 pcs28000 pcs100000 pcs
$0.017$0.015$0.013$0.012$0.01

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Product parameter

Part Number RN4902FE,LF(CT Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN/PNP PREBIAS 0.1W ES6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2204261 pcs Data sheet RN4902FE
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package ES6 Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 100mW Packaging Tape & Reel (TR)
Package / Case SOT-563, SOT-666 Other Names RN4902FE,LF(CB
RN4902FELF(CTTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz, 200MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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