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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN4606(TE85L,F)

RN4606(TE85L,F)

RN4606(TE85L,F)
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Part Number RN4606(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN/PNP PREBIAS 0.3W SM6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4101 pcs
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Part Number RN4606(TE85L,F) Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN/PNP PREBIAS 0.3W SM6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4101 pcs Data sheet RN4606
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package SM6 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 4.7 kOhms
Power - Max 300mW Packaging Tape & Reel (TR)
Package / Case SC-74, SOT-457 Other Names RN4606(TE85LF)TR
RN4606TE85LF
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 200MHz, 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz, 250MHz 300mW Surface Mount SM6 DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 100µA (ICBO) Current - Collector (Ic) (Max) 100mA

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