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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN2965(TE85L,F)

RN2965(TE85L,F)

RN2965(TE85L,F)
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Part Number RN2965(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP PREBIAS 0.2W US6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 578775 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs25 pcs100 pcs
$0.202$0.145$0.112$0.085
250 pcs500 pcs1000 pcs 
$0.06$0.048$0.037 

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Quantity:
Total:
$0.202

Product parameter

Part Number RN2965(TE85L,F) Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP PREBIAS 0.2W US6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 578775 pcs Data sheet RN2961-66
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package US6 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 200mW Packaging Cut Tape (CT)
Package / Case 6-TSSOP, SC-88, SOT-363 Other Names RN2965(TE85LF)CT
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6 DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 100mA

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