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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN2910FE,LF(CB

RN2910FE,LF(CB

RN2910FE,LF(CB
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Part Number RN2910FE,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP PREBIAS 0.1W ES6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 2517513 pcs
Reference Price
(In US Dollars)		4000 pcs
$0.01

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Part Number RN2910FE,LF(CB Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP PREBIAS 0.1W ES6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2517513 pcs Data sheet RN2910FE-11FE
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package ES6 Series -
Resistor - Emitter Base (R2) - Resistor - Base (R1) 4.7 kOhms
Power - Max 100mW Packaging Tape & Reel (TR)
Package / Case SOT-563, SOT-666 Other Names RN2910FE(T5L,F,T)
RN2910FE(T5LFT)TR
RN2910FE(T5LFT)TR-ND
RN2910FE,LF(CT
RN2910FELF(CBTR
RN2910FELF(CTTR
RN2910FELF(CTTR-ND
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

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