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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN2706JE(TE85L,F)

RN2706JE(TE85L,F)

RN2706JE(TE85L,F)
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Part Number RN2706JE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP PREBIAS 0.1W ESV
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5617 pcs
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Part Number RN2706JE(TE85L,F) Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP PREBIAS 0.1W ESV Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5617 pcs Data sheet RN2701JE-06JE
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Supplier Device Package ESV Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 4.7 kOhms
Power - Max 100mW Packaging Cut Tape (CT)
Package / Case SOT-553 Other Names RN2706JE(TE85LF)CT
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 100mA

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