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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN2511(TE85L,F)

RN2511(TE85L,F)

RN2511(TE85L,F)
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Part Number RN2511(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP PREBIAS 0.3W SMV
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 793116 pcs
Reference Price
(In US Dollars)
3000 pcs
$0.031

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Total:
$0.031

Product parameter

Part Number RN2511(TE85L,F) Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP PREBIAS 0.3W SMV Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 793116 pcs Data sheet RN2510-11
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Supplier Device Package SMV Series -
Resistor - Emitter Base (R2) - Resistor - Base (R1) 10 kOhms
Power - Max 300mW Packaging Tape & Reel (TR)
Package / Case SC-74A, SOT-753 Other Names RN2511(TE85LF)TR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 300mW Surface Mount SMV DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 100mA

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