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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN2130MFV,L3F

RN2130MFV,L3F

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Part Number RN2130MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Description X34 PB-F VESM TRANSISTOR PD 150M
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 2231508 pcs
Reference Price
(In US Dollars)
8000 pcs
$0.011

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Part Number RN2130MFV,L3F Manufacturer Toshiba Semiconductor and Storage
Description X34 PB-F VESM TRANSISTOR PD 150M Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2231508 pcs Data sheet RN2130MFV
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA Transistor Type PNP - Pre-Biased
Supplier Device Package VESM Series -
Resistor - Emitter Base (R2) 100 kOhms Resistor - Base (R1) 100 kOhms
Power - Max 150mW Package / Case SOT-723
Other Names RN2130MFVL3F Mounting Type Surface Mount
Manufacturer Standard Lead Time 16 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 100mA

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