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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN1961FE(TE85L,F)

RN1961FE(TE85L,F)

RN1961FE(TE85L,F)
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Part Number RN1961FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2NPN PREBIAS 0.1W ES6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4779 pcs
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Part Number RN1961FE(TE85L,F) Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2NPN PREBIAS 0.1W ES6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4779 pcs Data sheet RN1961-66FE
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package ES6 Series -
Resistor - Emitter Base (R2) 4.7 kOhms Resistor - Base (R1) 4.7 kOhms
Power - Max 100mW Packaging Tape & Reel (TR)
Package / Case SOT-563, SOT-666 Other Names RN1961FE(TE85LF)TR
RN1961FETE85LF
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 100mA

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