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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1314(TE85L,F)

RN1314(TE85L,F)

RN1314(TE85L,F)
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Part Number RN1314(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.1W USM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1311759 pcs
Reference Price
(In US Dollars)		3000 pcs
$0.018

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$0.018

Product parameter

Part Number RN1314(TE85L,F) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.1W USM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1311759 pcs Data sheet RN1314-18
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type NPN - Pre-Biased
Supplier Device Package USM Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 1 kOhms
Power - Max 100mW Packaging Tape & Reel (TR)
Package / Case SC-70, SOT-323 Other Names RN1314(TE85LF)
RN1314(TE85LF)-ND
RN1314(TE85LF)TR
RN1314TE85LF
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount USM
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number RN131*

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