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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1102T5LFT

RN1102T5LFT

RN1102T5LFT
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Part Number RN1102T5LFT
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.1W SSM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 447538 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs25 pcs100 pcs250 pcs
$0.154$0.139$0.10$0.078$0.049

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Target Price:(USD)
Quantity:
Total:
$0.154

Product parameter

Part Number RN1102T5LFT Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.1W SSM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 447538 pcs Data sheet RN110x
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Transistor Type NPN - Pre-Biased
Supplier Device Package SSM Series -
Resistor - Emitter Base (R2) 10 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 100mW Packaging Cut Tape (CT)
Package / Case SC-75, SOT-416 Other Names RN1102T5LFTCT
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA

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