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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > GT60N321(Q)

GT60N321(Q)

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Part Number GT60N321(Q)
Manufacturer Toshiba Semiconductor and Storage
Description IGBT 1000V 60A 170W TO3P LH
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4242 pcs
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Part Number GT60N321(Q) Manufacturer Toshiba Semiconductor and Storage
Description IGBT 1000V 60A 170W TO3P LH Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4242 pcs Data sheet GT60N321
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 1000V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A Test Condition -
Td (on/off) @ 25°C 330ns/700ns Switching Energy -
Supplier Device Package TO-3P(LH) Series -
Reverse Recovery Time (trr) 2.5µs Power - Max 170W
Packaging Tube Package / Case TO-3PL
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard IGBT Type -
Detailed Description IGBT 1000V 60A 170W Through Hole TO-3P(LH) Current - Collector Pulsed (Icm) 120A
Current - Collector (Ic) (Max) 60A Base Part Number GT60

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