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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > GT10J312(Q)

GT10J312(Q)

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Part Number GT10J312(Q)
Manufacturer Toshiba Semiconductor and Storage
Description IGBT 600V 10A 60W TO220SM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5949 pcs
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Part Number GT10J312(Q) Manufacturer Toshiba Semiconductor and Storage
Description IGBT 600V 10A 60W TO220SM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5949 pcs Data sheet GT10J312
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A Test Condition 300V, 10A, 100 Ohm, 15V
Td (on/off) @ 25°C 400ns/400ns Switching Energy -
Supplier Device Package TO-220SM Series -
Reverse Recovery Time (trr) 200ns Power - Max 60W
Packaging Tube Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard IGBT Type -
Detailed Description IGBT 600V 10A 60W Surface Mount TO-220SM Current - Collector Pulsed (Icm) 20A
Current - Collector (Ic) (Max) 10A Base Part Number GT10

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