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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SD2695,T6F(M

2SD2695,T6F(M

2SD2695,T6F(M
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Part Number 2SD2695,T6F(M
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN 2A 60V TO226-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5195 pcs
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Part Number 2SD2695,T6F(M Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN 2A 60V TO226-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5195 pcs Data sheet 2SD2695
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A Transistor Type NPN
Supplier Device Package TO-92MOD Series -
Power - Max 900mW Packaging Bulk
Package / Case TO-226-3, TO-92-3 Long Body Other Names 2SD2695T6F(M
2SD2695T6FM
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 100MHz Detailed Description Bipolar (BJT) Transistor NPN 60V 2A 100MHz 900mW Through Hole TO-92MOD
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A, 2V Current - Collector Cutoff (Max) 10µA (ICBO)
Current - Collector (Ic) (Max) 2A

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