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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SD2206A(T6SEP,F,M

2SD2206A(T6SEP,F,M

2SD2206A(T6SEP,F,M

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Part Number	2SD2206A(T6SEP,F,M
Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 2A 120V TO226-3
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4484 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
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Product parameter

Part Number	2SD2206A(T6SEP,F,M	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 2A 120V TO226-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4484 pcs	Data sheet	2SD2206
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	120V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 1mA, 1A	Transistor Type	NPN
Supplier Device Package	TO-92MOD	Series	-
Power - Max	900mW	Packaging	Bulk
Package / Case	TO-226-3, TO-92-3 Long Body	Other Names	2SD2206A(T6SEPFM 2SD2206AT6SEPFM
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 120V 2A 900mW Through Hole TO-92MOD
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 1A, 2V	Current - Collector Cutoff (Max)	-
Current - Collector (Ic) (Max)	2A

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