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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SD1221-Y(Q)

2SD1221-Y(Q)

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Part Number 2SD1221-Y(Q)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN 60V 3A PW MOLD
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4733 pcs
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Part Number 2SD1221-Y(Q) Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN 60V 3A PW MOLD Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4733 pcs Data sheet 2SD1221
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 1V @ 300mA, 3A Transistor Type NPN
Supplier Device Package PW-MOLD Series -
Power - Max 1W Packaging Bulk
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 3MHz
Detailed Description Bipolar (BJT) Transistor NPN 60V 3A 3MHz 1W Surface Mount PW-MOLD DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 5V
Current - Collector Cutoff (Max) 100µA (ICBO) Current - Collector (Ic) (Max) 3A

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