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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SB1481(TOJS,Q,M)

2SB1481(TOJS,Q,M)

2SB1481(TOJS,Q,M)
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Part Number 2SB1481(TOJS,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 4A 100V TO220-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5666 pcs
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Part Number 2SB1481(TOJS,Q,M) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 4A 100V TO220-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5666 pcs Data sheet 2SB1481
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 6mA, 3A Transistor Type PNP
Supplier Device Package TO-220NIS Series -
Power - Max 2W Packaging Bulk
Package / Case TO-220-3 Full Pack Other Names 2SB1481(TOJSQM)
2SB1481TOJSQM
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition - Detailed Description Bipolar (BJT) Transistor PNP 100V 4A 2W Through Hole TO-220NIS
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 3A, 2V Current - Collector Cutoff (Max) 2µA (ICBO)
Current - Collector (Ic) (Max) 4A

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