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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SA965-O(TE6,F,M)

2SA965-O(TE6,F,M)

2SA965-O(TE6,F,M)
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Part Number 2SA965-O(TE6,F,M)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 800MA 120V TO226-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5141 pcs
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Part Number 2SA965-O(TE6,F,M) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 800MA 120V TO226-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5141 pcs Data sheet 2SA965
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA Transistor Type PNP
Supplier Device Package LSTM Series -
Power - Max 900mW Packaging Bulk
Package / Case TO-226-3, TO-92-3 Long Body Other Names 2SA965-O(TE6FM)
2SA965OTE6FM
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 120MHz Detailed Description Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 900mW Through Hole LSTM
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA, 5V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 800mA

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