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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SA1955FVBTPL3Z

2SA1955FVBTPL3Z

2SA1955FVBTPL3Z
OMRON AUTOMATION & SAFETYImages are for reference only.
See Product Specifications for product details.
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Part Number 2SA1955FVBTPL3Z
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 12V 0.4A VESM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 813628 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs25 pcs100 pcs
$0.193$0.139$0.108$0.081
250 pcs500 pcs1000 pcs2500 pcs
$0.058$0.046$0.035$0.031

Submit a Request For Quotation on quantities greater than those displayed.

Target Price:(USD)
Quantity:
Total:
$0.193

Product parameter

Part Number 2SA1955FVBTPL3Z Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 12V 0.4A VESM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 813628 pcs Data sheet 2SA1955F
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 12V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 200mA Transistor Type PNP
Supplier Device Package VESM Series -
Power - Max 100mW Packaging Original-Reel®
Package / Case SOT-723 Other Names 2SA1955FVBTPL3ZDKR
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 130MHz Detailed Description Bipolar (BJT) Transistor PNP 12V 400mA 130MHz 100mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA, 2V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 400mA

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