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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SA1382,T6MIBF(J

2SA1382,T6MIBF(J

2SA1382,T6MIBF(J
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Part Number 2SA1382,T6MIBF(J
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 2A 50V TO226-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4270 pcs
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Part Number 2SA1382,T6MIBF(J Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 2A 50V TO226-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4270 pcs Data sheet 2SA1382
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 500mV @ 33mA, 1A Transistor Type PNP
Supplier Device Package TO-92MOD Series -
Power - Max 900mW Packaging Bulk
Package / Case TO-226-3, TO-92-3 Long Body Other Names 2SA1382T6MIBF(J
2SA1382T6MIBFJ
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 110MHz Detailed Description Bipolar (BJT) Transistor PNP 50V 2A 110MHz 900mW Through Hole TO-92MOD
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 2V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 2A

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