TC58BYG2S0HBAI6
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| Part Number | TC58BYG2S0HBAI6 |
|---|---|
| Manufacturer | Toshiba Memory America, Inc. |
| Description | IC FLASH 4G PARALLEL 67VFBGA |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | 1 pcs | 10 pcs | 25 pcs | 50 pcs | |
|---|---|---|---|---|---|
| $1.841 | $1.682 | $1.65 | $1.638 | ||
| 100 pcs | 338 pcs | 676 pcs | 1014 pcs | ||
| $1.47 | $1.464 | $1.373 | $1.314 | ||
- Product parameter
- Data sheet
Product parameter
| Part Number | TC58BYG2S0HBAI6 | Manufacturer | Toshiba Memory America, Inc. |
|---|---|---|---|
| Description | IC FLASH 4G PARALLEL 67VFBGA | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 29821 pcs | Data sheet | TC58BYG2S0HBAI6 |
| Category | Integrated Circuits (ICs) | Write Cycle Time - Word, Page | 25ns |
| Voltage - Supply | 1.7 V ~ 1.95 V | Technology | FLASH - NAND (SLC) |
| Supplier Device Package | 67-VFBGA (6.5x8) | Series | Benand™ |
| Packaging | Tray | Package / Case | 67-VFBGA |
| Other Names | TC58BYG2S0HBAI6JDH TC58BYG2S0HBAI6YCL |
Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount | Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Memory Type | Non-Volatile | Memory Size | 4Gb (512M x 8) |
| Memory Interface | Parallel | Memory Format | FLASH |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Detailed Description | FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 25ns 67-VFBGA (6.5x8) |
| Access Time | 25ns |
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