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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TSM60N1R4CH C5G

TSM60N1R4CH C5G

TSM60N1R4CH C5G
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number TSM60N1R4CH C5G
Manufacturer TSC (Taiwan Semiconductor)
Description MOSFET N-CH 600V 3.3A TO251
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 119014 pcs
Reference Price
(In US Dollars)
15000 pcs
$0.172

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Target Price:(USD)
Quantity:
Total:
$0.172

Product parameter

Part Number TSM60N1R4CH C5G Manufacturer TSC (Taiwan Semiconductor)
Description MOSFET N-CH 600V 3.3A TO251 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 119014 pcs Data sheet TSM60N1R4
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-251 (IPAK) Series -
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 2A, 10V Power Dissipation (Max) 38W (Tc)
Packaging Tube Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Other Names TSM60N1R4CH C5G-ND
TSM60N1R4CHC5G
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 370pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V Detailed Description N-Channel 600V 3.3A (Tc) 38W (Tc) Through Hole TO-251 (IPAK)
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)

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