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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TSM120N10PQ56 RLG

TSM120N10PQ56 RLG

TSM120N10PQ56 RLG
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Part Number TSM120N10PQ56 RLG
Manufacturer TSC (Taiwan Semiconductor)
Description MOSFET N-CH 100V 58A 8PDFN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5688 pcs
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Part Number TSM120N10PQ56 RLG Manufacturer TSC (Taiwan Semiconductor)
Description MOSFET N-CH 100V 58A 8PDFN Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5688 pcs Data sheet TSM120N10PQ56
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-PDFN (5x6) Series -
Rds On (Max) @ Id, Vgs 12 mOhm @ 30A, 10V Power Dissipation (Max) 36W (Tc)
Packaging Tape & Reel (TR) Package / Case 8-PowerTDFN
Other Names TSM120N10PQ56 RLGTR
TSM120N10PQ56 RLGTR-ND
TSM120N10PQ56RLGTR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 3 (168 Hours)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 3902pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V Detailed Description N-Channel 100V 58A (Tc) 36W (Tc) Surface Mount 8-PDFN (5x6)
Current - Continuous Drain (Id) @ 25°C 58A (Tc)

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