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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TSM061NA03CV RGG

TSM061NA03CV RGG

TSM061NA03CV RGG
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Part Number TSM061NA03CV RGG
Manufacturer TSC (Taiwan Semiconductor)
Description MOSFET N-CH 30V 66A 8PDFN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 94302 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.51$0.452$0.358$0.277$0.219

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Quantity:
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$0.51

Product parameter

Part Number TSM061NA03CV RGG Manufacturer TSC (Taiwan Semiconductor)
Description MOSFET N-CH 30V 66A 8PDFN Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 94302 pcs Data sheet TSM061NA03CV
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-PDFN (3x3) Series -
Rds On (Max) @ Id, Vgs 6.1 mOhm @ 16A, 10V Power Dissipation (Max) 44.6W (Tc)
Packaging Cut Tape (CT) Package / Case 8-PowerWDFN
Other Names TSM061NA03CV RGGCT
TSM061NA03CV RGGCT-ND
TSM061NA03CVRGGCT
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 30 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1136pF @ 15V Gate Charge (Qg) (Max) @ Vgs 19.3nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 66A (Tc) 44.6W (Tc) Surface Mount 8-PDFN (3x3) Current - Continuous Drain (Id) @ 25°C 66A (Tc)

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