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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > STGYA120M65DF2

STGYA120M65DF2

STGYA120M65DF2
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Part Number STGYA120M65DF2
Manufacturer STMicroelectronics
Description TRENCH GATE FIELD-STOP IGBT, M S
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 14132 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs100 pcs600 pcs
$3.961$3.639$3.073$2.734

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Target Price:(USD)
Quantity:
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$3.961

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Part Number STGYA120M65DF2 Manufacturer STMicroelectronics
Description TRENCH GATE FIELD-STOP IGBT, M S Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 14132 pcs Data sheet STGYA120M65DF2 Datasheet
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 650V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 120A Test Condition 400V, 120A, 4.7 Ohm, 15V
Td (on/off) @ 25°C 66ns/185ns Switching Energy 1.8mJ (on), 4.41mJ (off)
Supplier Device Package MAX247™ Series *
Reverse Recovery Time (trr) 202ns Power - Max 625W
Packaging Tube Package / Case TO-247-3 Exposed Pad
Other Names 497-16976 Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 42 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard IGBT Type NPT, Trench Field Stop
Gate Charge 420nC Detailed Description IGBT NPT, Trench Field Stop 650V 160A 625W Through Hole MAX247™
Current - Collector Pulsed (Icm) 360A Current - Collector (Ic) (Max) 160A

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