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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > RJP65T43DPQ-A0#T2

RJP65T43DPQ-A0#T2

RJP65T43DPQ-A0#T2

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Part Number	RJP65T43DPQ-A0#T2
Manufacturer	Renesas Electronics America
Description	IGBT TRENCH 650V 60A TO247A
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 28624 pcs
Reference Price (In US Dollars)	1 pcs	10 pcs	25 pcs
Reference Price (In US Dollars)	$1.539	$1.374	$1.236

Product parameter
Data sheet

Product parameter

Part Number	RJP65T43DPQ-A0#T2	Manufacturer	Renesas Electronics America
Description	IGBT TRENCH 650V 60A TO247A	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	28624 pcs	Data sheet	RJP65T43DPQ-A0
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	650V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 20A	Test Condition	400V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C	35ns/105ns	Switching Energy	170µJ (on), 130µJ (off)
Supplier Device Package	TO-247A	Series	-
Power - Max	150W	Packaging	Tube
Package / Case	TO-247-3	Operating Temperature	175°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	Not Applicable
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Type	Standard
IGBT Type	Trench	Gate Charge	69nC
Detailed Description	IGBT Trench 650V 60A 150W Through Hole TO-247A	Current - Collector (Ic) (Max)	60A

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